型号 IPD65R420CFD
厂商 Infineon Technologies
描述 MOSFET N-CH 650V 8.7A TO252
IPD65R420CFD PDF
代理商 IPD65R420CFD
标准包装 1
系列 CoolMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 650V
电流 - 连续漏极(Id) @ 25° C 8.7A
开态Rds(最大)@ Id, Vgs @ 25° C 420 毫欧 @ 3.4A,10V
Id 时的 Vgs(th)(最大) 4.5V @ 340µA
闸电荷(Qg) @ Vgs 32nC @ 10V
输入电容 (Ciss) @ Vds 870pF @ 100V
功率 - 最大 83.3W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 PG-TO252
包装 标准包装
其它名称 IPD65R420CFDDKR
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